Mr. T. Akilan

Mr. T. AKILAN, M.Sc., M.Phil.
Project Fellow-UGC Major Research Project
PG and Research Department of Physics
Thiagarajar College of Arts and science
Teppakulam, Madurai-625 009
Mobile: 94898 65653

Ph.D. Topic:

Date of Registration :  03/10/2011
Registration no. : F8754
Date of viva voce examination :

Introduction about Ph.D. work:

O-DMS (Oxide based DMS) materials have created interest due to the possibility of inducing room temperature ferromagnetism. O-DMS materials are essential materials in spintronic devices. The study of local structural fluctuation and electron density distribution may help in imminent understanding the nature of bonding and charge transfer etc. The results of localized structure of the material with varying dopant concentration may pave way for new spintronic devices.

The main objective of this work is to investigate the growth, physical and X-ray characterization of samples having room temperature ferromagnetism and semiconducting properties. The growth of ZnO doped with transition metals like V, Ni, Fe and Ti and mixed systems (possibility of RT FM) has been accomplished. Melt growth technique has been used. Solid state reaction technique offers several advantages such as low cost, easy controlling of the total dopant amounts, and facility of producing bulk amounts of materials. The growth has been accomplished using a well-planned temperature control programme. The quality of the grown samples have been checked by X-ray methods. The impurity levels have been  estimated using SEM/EDAX (Energy Dispersive Analysis of X-rays). Powder X-ray data – to study structural changes have been used to determine the compositions of the dopant atoms. The magnetic susceptibility measurements, M Vs H, M Vs T to analyze the AFM, FM transitions have been done.
Optical band gap studies have been  undertaken in-order to measure the optical properties of ZnO.

Materials interest:
Zinc oxide, semiconductors, transition metal ions

  • Zn1-xTixO (x=0.02, 0.03)
  • Zn1-xFexO (x = 0.02, 0.04, 0.06)
  • Zn1-xVxO (x=0.02, 0.04, 0.06)
  • Zn1-xNix/2Vx/2O (x=0.02, 0.04, 0.06)

List of Publications:

Structure of vanadium doped zinc oxide, Zn1-xVxO, 
T. Akilan, N. Srinivasan, R. Saravanan, Prasanta Chowdury,
Materials and Manufacturing process, Taylor & Francis, 29:7, 780-788 (2014) 
(Impact Factor: 4.616)
Structure analysis of Ni and V co- doped zinc oxide prepared 
by solid state reactions, 
T. Akilan, N. Srinivasan, R. Saravanan 
Journal of material science : Materials in electronics, 25,2898–2904(2014) 
(Springer Publications)
(Impact Factor: 2.478)
Magnetic and optical properties of Ti doped ZnO prepared by solid state reaction, 
T. Akilan, N. Srinivasan, R. Saravanan
Material science in semiconductor processing, 30,  381 - 187(2015)
(Elseveir Publication) 
(Impact Factor: 3.927)
Structural and magnetic studies on Fe doped zinc oxide, Zn1-XFexO synthesized by 
solid state reaction, 
T. Akilan, N. Srinivasan, R. Saravanan,
Journal of material science : Materials in electronics, 26,9882–9890(2015) 
(Springer Publications) 
(Impact Factor: 2.478)
CV of Dr R Saravanan
Close (CV of Dr R Saravanan)