The present work is to synthesize and characterize the diluted magnetic semiconductors. The following four series have been chosen for the present research work.
- Zn1-xTixO (x=0.02, 0.03)
- Zn1-xFexO (x = 0.02, 0.04, 0.06)
- Zn1-xVxO (x=0.02, 0.04, 0.06)
- Zn1-xNix/2Vx/2O (x=0.02, 0.04, 0.06)
The main objectives of the present work are ;
To prepare ZnO semiconductors by solid-state reaction method (SSR).
To investigate the prepared transition metal doped dilute oxide semiconductor by powder X-ray diffraction for the detailed structural analysis.
To analyze the morphology of the semiconductors by scanning electron microscopy (SEM).
To analyze the elemental compositions of the prepared materials using energy dispersive X-ray spectroscopy (EDS).
To estimate the optical band gap (Eg) for all the prepared materials by UV-visible absorption spectra by using Tauc plot technique (Wood and Tauc, 1972).
To analyze the magnetic properties of the materials by vibrating sample magnetometer (VSM).
To study charge density distribution for the above mentioned transition metal doped dilute oxide semiconductor using Rietveld (Rietveld, 1969) and maximum entropy method (MEM) (Collins, 1982) using powder X-ray diffraction data.
To correlate the charge derived properties of the transition metal doped dilute magnetic oxide semiconductors with the addition of the dopant with the experimental results.